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| Customization: | Available |
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| Type: | Slot Type Photoelectric Sensor |
| Output Signal Type: | Analog Type |
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| Sensing method | grooved type | |||||
| Type | DC type | NPN | NO | E3S-GS7N | ||
| NC | E3S-GS7N2 | |||||
| NO+NC | ||||||
| PNP | NO | E3S-GS7P | ||||
| NC | E3S-GS7P2 | |||||
| NO+NC | ||||||
| Two-wire | NO | |||||
| NC | ||||||
| AC type | Two-wire | NO | ||||
| NC | ||||||
| Three-wire | NO+NC | |||||
| Delection range | 7mm | |||||
| Delection range regulation | Sensitivity adjuster | |||||
| ON Time delay | 1.5ms | |||||
| Light source | infrared light 660nm | |||||
| Supply voltage |
DC type:DC12-24V(6-36V)Impulse(p-p)10% below AC type:AC110-220V(90-250V)50/60Hz |
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| Withstand voltage | AC1000V 50/60HZ 1min between charging part and housing | |||||
| Voltage influence | Inside ±15% rated supply voltage range, at rated supply voltage value, inside ±10% detection distance | |||||
| Consumption current | N.P type:13mA below, D type:0.8mA below, A type:1.7mA below below,A type:1.7mA below | |||||
| Control output | N.P type: 300mA below,D type:200mA below,A type:400mA below | |||||
| Loop protection | N.P.D type: reversal connection protection,surge absorption,load short-circuit protection,A type:surge absorption | |||||
| Ambient temperature & humidity |
During operation,storage:individually-30~+65ºC (no freeze,no drew),During operation, storage:individually 35~95%RH |
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| Temperature influence |
Temperature range -30-+65ºC,at+23ºC, ±15%detection distance Temperature range -25-+60ºC,at+23ºC, ±10%detection distance |
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| Insulation impedance | 50MΩ above(DC500 megameter)between charging part and housing | |||||
| Material | Housing:Nickel plated brass Detection surface:ABS | |||||
| Protection level | IP67( IEC specification) | |||||
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